Investigation of beta-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD
Investigation of beta-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD
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研究低压 MOCVD 在外延 GaN/蓝宝石 (0001) 衬底上生长的 β-Ga2O3 薄膜
DOI：
10.1016/j.jallcom.2020.157810
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发表时间：
2021
影响因子：
6.2
通讯作者：
Hao Yue
中科院分区：
文献类型：
--
作者：
Zhang Tao;Li Yifan;Zhang Yachao;Feng Qian;Ning Jing;Zhang Chunfu;Zhang Jincheng;Hao Yue
本文采用低压MOCVD法，分别在600,700和800°C下在epi-GaN/蓝宝石(0001)衬底上生长了β-Ga2O3薄膜，并研究了温度对晶体结构、表面形貌和元素化学态的影响。XRD分析发现，β-Ga2O3薄膜优先沿(-201)晶面生长，薄膜的晶体质量随着温度的升高而提高。 AFM和SEM表明，随着温度的升高，薄膜的表面形貌发生了明显的变化，表面变得致密、平坦。800℃下的XRD摇摆曲线的半高宽比600和700℃下生长的β-Ga2O3薄膜小，表明800℃下生长的β-Ga2O3薄膜具有更好的晶体质量。XPS显示，Ga 2p、Ga 3d和O 1s峰的强度随着温度的升高而增强。 HRTEM证实了β-Ga2O3的外延关系，与XRD结果一致。
In this paper,β-Ga2O3films were grown on epi-GaN/sapphire (0001) substrates at 600,700 and 800 °C by low pressure MOCVD, respectively.And the influences of temperature on the crystal structure, surface morphology and element chemical state were investigated.XRD analysis found that β-Ga2O3films were preferentially grown along the (−201) crystal plane, and crystal quality of the films improved with increasing temperature.AFM and SEM indicated that the surface morphology of films was obviously changed with the increasing temperature, and the surface became compact and flat.The FWHM value of XRD rocking curve at 800 °C less than those grown at 600 and 700 °C, indicating that the β-Ga2O3film grown at 800 °C has better crystal quality.XPS showed that the intensity of the Ga 2p, Ga 3d and O 1s peaks increased with temperature, and epitaxial relationship of β-Ga2O3was confirmed by HRTEM, consistent with the XRD results.