Channel Switching Effect and Magnetoresistance in Iron Doped Amorphous Carbon Films on Silicon Substrates
Channel Switching Effect and Magnetoresistance in Iron Doped Amorphous Carbon Films on Silicon Substrates
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DOI：
10.1109/tmag.2011.2156391
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发表时间：
2011-09
影响因子：
2.1
通讯作者：
C. Wan;Xiaozhong Zhang;J. Vanacken;Xili Gao;X. Tan;V. Moshchalkov
中科院分区：
文献类型：
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作者：
C. Wan;Xiaozhong Zhang;J. Vanacken;Xili Gao;X. Tan;V. Moshchalkov
通过脉冲激光沉积在n型硅衬底上沉积铁掺杂非晶碳薄膜。所制作的结构在 5 T 下表现出 34% 的正磁阻 (MR)。霍尔测量表明碳膜具有空穴传导性，因此在界面附近形成 p-n 异质结，从而使电流传输通道从上述低温碳膜转移到高温 Si 衬底。在高温下测量的 MR 归因于硅衬底，而不是如许多金属/绝缘势垒/硅结构所报告的那样归因于衬底中的反型层。
Iron doped amorphous carbon films were deposited by pulse laser deposition on n-type silicon substrates. The as-fabricated structure shows a positive magnetoresistance (MR) of 34% at 5 T. Hall measurements show that the carbon film is hole-conducting and therefore a p-n heterojunction forms near the interface so that the current transport channel is transferred from the above carbon films at low temperatures to the Si substrates at high temperatures. The MR measured at high temperatures is attributed to the silicon substrates rather than to an inversion layer in the substrates as reported for many Metal/Insulating Barrier/Si structures.