Ultra-fast silicon detectors (UFSD)
Ultra-fast silicon detectors (UFSD)
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DOI：
10.1016/j.nima.2016.03.093
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发表时间：
2016-09-21
影响因子：
1.4
通讯作者：
Zavrtanik, M.
中科院分区：
文献类型：
--
作者：
Sadrozinski, H. F. -W.;Anker, A.;Zavrtanik, M.
我们报告的测量超快硅探测器（UFSD），这是基于低增益雪崩探测器（LGAD）。它们是具有内部电荷倍增的n on p传感器，这是由于在结下方存在薄的低电阻率扩散层，该扩散层是用高度掺杂的注入物获得的。我们已经进行了几个光束测试与LGAD的不同增益和报告的测量时间分辨率，比较它与激光注入和模拟。对于300 μ m厚的LGAD，在测试光束测得的时间分辨率为120 ps，而它是57 ps的红外激光，在协议与模拟使用Weightfield2。对于薄传感器及其读出电子学的发展，我们专注于对脉冲形状的理解，并指出传感器电容起着关键作用。(C)2016爱思唯尔B.V.保留所有权利。
We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300 mu m thick LGAD, the timing resolution measured at test beams is 120 ps while it is 57 ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays. (C) 2016 Elsevier B.V. All rights reserved.