Controllable Growth of Copper Iodide for High-Mobility Thin Films and Self-Assembled Microcrystals
Controllable Growth of Copper Iodide for High-Mobility Thin Films and Self-Assembled Microcrystals
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DOI：
10.1021/acsaelm.0c00692
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发表时间：
2020-10
期刊：
影响因子：
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通讯作者：
C. Yang;E. Rose;Wenlei Yu;T. Stralka;F. Geng;M. Lorenz;M. Grundmann
中科院分区：
文献类型：
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作者：
C. Yang;E. Rose;Wenlei Yu;T. Stralka;F. Geng;M. Lorenz;M. Grundmann
碘化铜(CuI)是一种新兴的高性能p型宽带隙半导体材料。然而，CuI薄膜和纳米晶体的生长机制目前还不清楚，因为它们不能在不同的温度下生长。
Copper iodide (CuI) is an emerging high-performance p-type, wide-band-gap semiconductor. However, the growth mechanisms of CuI thin films and nanocrystals are currently unclear, as they do not foll...