In-situ observation of self-cleansing phenomena during ultra-high vacuum anneal of transition metal nitride thin films: Prospects for non-destructive photoelectron spectroscopy
In-situ observation of self-cleansing phenomena during ultra-high vacuum anneal of transition metal nitride thin films: Prospects for non-destructive photoelectron spectroscopy
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DOI：
10.1063/1.4968803
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发表时间：
2016-11-21
影响因子：
4
通讯作者：
Hultman, L.
中科院分区：
文献类型：
--
作者：
Greczynski, G.;Hultman, L.
发现在TiN、NbN和VN薄膜的超高真空退火期间发生过渡金属氮化物的自清洁。在1000 ℃等温退火后，暴露于空气中的自然氧化层消失。此外，对于TiN，退火后记录的Ti 2p和N 1s X射线光电子能谱（XPS）与从原位生长和分析的外延TiN（001）获得的那些相同。这些意想不到的效果被解释为氧化物分解结合氮补充的氮化物在再结晶过程中。这一发现开辟了新的可能性，通过非破坏性的XPS分析，真正的键合分配，从而避免Ar蚀刻的文物。(C)2016年作者。
Self-cleansing of transition metal nitrides is discovered to take place during ultra-high vacuum annealing of TiN, NbN, and VN thin films. Native oxide layers from air exposure disappear after isothermal anneal at 1000 degrees C. Also, for TiN, the Ti 2p and N 1s X-ray photoelectron spectra (XPS) recorded after the anneal are identical to those obtained from in-situ grown and analyzed epitaxial TiN(001). These unexpected effects are explained by oxide decomposition in combination with N-replenishing of the nitride during recrystallization. The finding opens up new possibilities for true bonding assignments through non-destructive XPS analyses, thus avoiding artefacts from Ar etching. (C) 2016 Author(s).