(GaAl)As‐GaAs heterojunction transistors with high injection efficiency
(GaAl)As‐GaAs heterojunction transistors with high injection efficiency
复制标题
具有高注入效率的(GaAl)As-GaAs异质结晶体管
DOI：
10.1063/1.321850
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发表时间：
1975
影响因子：
3.2
通讯作者：
Kiyoshi Takahashi
中科院分区：
文献类型：
--
作者：
M. Konagai;Kiyoshi Takahashi
采用液相外延技术制备了n（GaAl）As-pGaAs-InGaAs异质结晶体管，其中使用了两种腐蚀剂来暴露pGaAs基区。异质结晶体管的特性作为注入电流密度和温度的函数进行检查。电测量表明，晶体管的共发射极电流增益β高达350。发射极异质结中的缺陷电流分量是耗尽区中的复合电流。
n (GaAl)As‐pGaAs‐nGaAs heterojunction transistors were fabricated by the liquid‐phase epitaxial technique, where two kinds of etchants were used to expose the pGaAs base region. The characteristics of the heterojunction transistors are examined as functions of the injection current density and the temperature. Electrical measurements showed that the transistors have a common emitter current gain β of up to 350. The defect current component in the emitter heterojunction is the recombination current in the depletion region.