Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths
Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths
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不同阱宽蓝紫光发射InGaN/GaN多量子阱局域化效应分析
DOI：
10.1088/1674-1056/26/1/017805
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发表时间：
2017
影响因子：
1.7
通讯作者：
Li Mo
中科院分区：
文献类型：
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作者：
Li Xiang;Zhao De-Gang;Jiang De-Sheng;Yang Jing;Chen Ping;Liu Zong-Shun;Zhu Jian-Jun;Liu Wei;He Xiao-Guang;Li Xiao-Jing;Liang Feng;Liu Jian-Ping;Zhang Li-Qun;Yang Hui;Zhang Yuan-Tao;Du Guo-Tong;Long Heng;Li Mo
通过金属有机化学气相沉积生长了四种具有不同阱宽度的蓝紫光发射InGaN/GaN多量子阱（MQW）结构。这些样品中的载流子局域化效应主要通过温度依赖性光致发光测量来研究。实验发现，随着井宽从1.8 nm增加到3.6 nm，局域化效应增强。温度引起的PL峰蓝移和线宽变化随着井宽的增加而增加，这意味着较宽的井中存在更大的电位波动幅度以及更多的局域化状态。此外，值得注意的是，由于温度引起的带隙收缩，PL光谱的展宽总是主要发生在PL光谱的低能侧，而在最宽阱的情况下，由于更浅的局域中心的存在，光谱曲线的大幅扩展也发生在高能侧。
Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.