Preparation of SrZrO3 Thermal Barrier Coating by Solution Precursor Plasma Spray

Preparation of SrZrO3 Thermal Barrier Coating by Solution Precursor Plasma Spray
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溶液前驱体等离子喷涂制备SrZrO3热障涂层

DOI:
10.1007/s11666-017-0527-8
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发表时间:
2017
影响因子:
3.1
通讯作者:
Shuang Yingchai
Shuang Yingchai
中科院分区:
材料科学2区
文献类型:
--
作者:
Li Xinhui;Ma Wen;Wen Jing;Bai Yu;Sun Li;Chen Baodong;Dong Hongying;Shuang Yingchai

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溶液前驱体等离子喷涂(SPPS)工艺能够沉积高度耐用的热障涂层(TBC)。在这项研究中,一种水性化学前体原料注入到等离子体射流存款SrZrO 3热障涂层的金属基板上。采用田口实验设计优化SPPS工艺。研究了SrZrO 3前驱体的热特性和相演变,以及各种喷涂参数对涂层沉积速率、显微硬度、显微组织和相稳定性的影响。结果表明,在给定喷涂距离、原料流量和雾化压力的条件下,最佳喷涂工艺参数为电弧电流600 A,氩气流量40 L/min,氢气流量10 L/min。采用该工艺参数制备的SrZrO 3涂层单程厚度为6.0 μm,孔隙率为18%左右,显微硬度为6.8 ± 0.1GPa。相稳定性研究表明,喷涂态SrZrO 3涂层在室温至1400 °C范围内具有良好的相稳定性,在1450 °C时随着时间的增加,涂层中的t-ZrO 2逐渐转变为m-ZrO 2,而SrZrO 3相没有发生变化。
The solution precursor plasma spray (SPPS) process is capable of depositing highly durable thermal barrier coatings (TBCs). In this study, an aqueous chemical precursor feedstock was injected into the plasma jet to deposit SrZrO3 thermal barrier coating on metal substrate. Taguchi design of experiments was employed to optimize the SPPS process. The thermal characteristics and phase evolution of the SrZrO3 precursor, as well as the influence of various spray parameters on the coating deposition rate, microhardness, microstructure, and phase stability, were investigated. The experimental results showed that, at given spray distance, feedstock flow rate, and atomization pressure, the optimized spray parameters were arc current of 600 A, argon flow rate of 40 L/min, and hydrogen flow rate of 10 L/min. The SrZrO3 coating prepared using the optimized spray parameters had single-pass thickness of 6.0 μm, porosity of ~18%, and microhardness of 6.8 ± 0.1 GPa. Phase stability studies indicated that the as-sprayed SrZrO3 coating had good phase stability in the temperature range from room temperature to 1400 °C, gradually exhibiting a phase transition from t′-ZrO2 to m-ZrO2 in the SrZrO3 coating at 1450 °C with increasing time, while the SrZrO3 phase did not change.