Excess Noise Characteristics of Al Ga As Avalanche Photodiodes
Excess Noise Characteristics of Al Ga As Avalanche Photodiodes
复制标题
Al Ga雪崩光电二极管的过量噪声特性
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
G. Rees
中科院分区：
文献类型：
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作者：
B. K. Ng;J. David;R. C. Tozer;M. Hopkinson;G. Hill;G. Rees
在i区宽度为1.02~0.02m的p-i-n和n-i-p二极管范围内测量了Al-Ga As的雪崩噪声特性.厚体二极管由于电子引发倍增而表现出较低的过剩噪声，但由于比率较大，含有m的二极管的过剩噪声由于死区效应而大大降低.最薄的二极管表现出非常低的过剩噪声，相当于高达90的乘法值。与大多数III-V材料相比，发现厚的和薄的Al-Ga As倍增层都可以提供非常低的过剩噪声，并且即使在薄的结构中，电子也必须启动倍增以最小化过剩噪声。
The avalanche noise characteristics of Al Ga As have been measured in a range of p-i-n and n-i-p diodes with i-re- gion widths varying from 1.02 to 0.02 m. While thick bulk diodes exhibit low excess noise from electron initiated multiplica- tion, owing to the large ratio , the excess noise of diodes with m were found to be greatly reduced by the effects of dead space. The thinnest diodes exhibit very low excess noise, corresponding to , up to a multiplication value of 90. In contrast to most III-V materials, it was found that both thick and thin Al Ga As multiplication layers can give very low excess noise and that electrons must initiate multiplication to minimize excess noise, even in thin structures.