Luminescence Studies of Oxygen‐Related Defects In Aluminum Nitride
Luminescence Studies of Oxygen‐Related Defects In Aluminum Nitride
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DOI：
10.1111/j.1151-2916.1990.tb06444.x
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发表时间：
1990-11
影响因子：
3.9
通讯作者：
R. Youngman;Jonathan H. Harris
中科院分区：
文献类型：
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作者：
R. Youngman;Jonathan H. Harris
氮化铝具有独特的能力，可以通过晶格溶解将氧容纳到超过 4 at.% 的水平。由于氧气对该材料的导热性产生有害影响，这种大量容纳氧气的机制具有技术和科学意义。当掺杂氧时，AlN 在近紫外区（~ 375 nm）表现出强烈的、非常宽的（FWHM > 1 eV）发光峰。尽管毫无疑问这种转变与晶格中氧的结合有关，但这种特征的异常宽度和它所衍生的特定复合物一直是一个争论的问题。本文回顾了过去对 AlN 中与氧相关的缺陷发光的研究，并介绍了最近详细的光致发光实验，这些实验描绘了发光随氧含量的变化而变化。这些数据与其他测量结合使用，以阐明与氧相关的缺陷的性质及其作为氧浓度函数的演变。提出了一个缺陷簇模型，该模型解释了 AlN 发光特性的转变，并且发现该模型与 AlN 中热传导和晶胞体积变化的测量结果一致。通过光致发光研究对 AlN 中与氧相关的缺陷的了解，然后通过扫描电子显微镜和透射电子显微镜中的阴极发光成像用于阴极发光研究。这些技术对于阐明烧结AlN陶瓷微观结构中氧的分布和相互作用非常有用，迄今为止，这一直是此类烧结陶瓷的微观结构和微观化学分析中的一个极其困难的问题。
Aluminum nitride possesses a unique ability to accommodate oxygen via lattice dissolution to levels exceeding 4 at.%. The mechanism for this large accommodation of oxygen is of technological and scientific interest due to the established delecterious effects of oxygen on the thermal conductivity in this material. When doped with oxygen, AlN exhibits an intense, very broad (FWHM > 1 eV), luminescence peak in the near‐UV (∼ 375 nm). Though there is little doubt that this transition is associated with oxygen incorporation in the lattice, both the anomalous width of this feature and the specific complex from which it is derived have been a matter of debate. This paper reviews past studies of the luminescence of oxygen‐related defects in AlN and presents recent detailed photoluminescence experiments which delineate changes in the luminescence as a function of oxygen content. These data are utilized in conjunction with other measurements to elucidate the nature of the oxygen‐related defect and its evolution as a function of oxygen concentration. A defect‐cluster model is presented which accounts for a transition in the luminescent properties of AlN and is found to be in accord with measurements on thermal conduction and unit‐cell volume changes in AlN. This understanding of the oxygen‐related defect in AlN from the photoluminescence studies is then utilized in cathodoluminescence studies via cathodoluminescence imaging in a scanning electron microscope and a transmission electron microscope. Such techniques are extremely useful in elucidating the distribution and interaction of oxygen in the microstructure of sintered AlN ceramics, which has been heretofore an extremely difficult problem in microstructural and microchemical analysis of such sintered ceramics.