Coherent storage of photoexcited triplet states using ^<29>Si nuclear spins in silicon
Coherent storage of photoexcited triplet states using ^<29>Si nuclear spins in silicon
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利用硅中^<29>Si核自旋光激发三重态的相干存储
DOI：
10.1103/physrevlett.108.097601
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and K. M. Itoh
中科院分区：
文献类型：
--
作者：
W. Akhtar;V. Filidou;T. Sekiguchi;E. Kawakami;T. Itahashi;L. Vlasenko;J. J. L. Morton;and K. M. Itoh
硅中氧空位中心的光激发亚稳三重态的脉冲电子顺磁共振波谱显示，亚能级的寿命与状态的寿命有显著差异。我们利用这一显著差异的衰减率到基态单重态，以实现近电子自旋极化在三重态。我们进一步证明了三重态电子自旋的相干态与超精细耦合的近邻核自旋之间的转移。我们测量了在此操作中使用的核自旋的相干时间，发现它不受三重态电子自旋存在的影响，并且等于核磁共振测量的体积值。
Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of thesublevels differs significantly from that of thestate. We exploit this significant difference in decay rates to the ground singlet state to achieve nearlyelectron-spin polarization within the triplet. We further demonstrate the transfer of a coherent state of the triplet electron spin to, and from, a hyperfine-coupled, nearest-neighbornuclear spin. We measure the coherence time of thenuclear spin employed in this operation and find it to be unaffected by the presence of the triplet electron spin and equal to the bulk value measured by nuclear magnetic resonance.