Structural and Optical Properties of Nonpolar AlN(1120) Films Grown on ZnO(1120) Substrates with a Room-Temperature GaN Buffer Layer
Structural and Optical Properties of Nonpolar AlN(1120) Films Grown on ZnO(1120) Substrates with a Room-Temperature GaN Buffer Layer
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DOI：
10.1143/jjap.49.060213
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发表时间：
2010-06
影响因子：
1.5
通讯作者：
K. Ueno;A. Kobayashi;J. Ohta;H. Fujioka
中科院分区：
文献类型：
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作者：
K. Ueno;A. Kobayashi;J. Ohta;H. Fujioka
采用脉冲激光沉积（PLD）技术，在ZnO衬底上用室温外延GaN缓冲层生长了a面AlN薄膜。根据X射线摇摆曲线的测量结果，这些AlN（1120）薄膜的基面层错密度低至1.1×105 cm-1，这是由于使用了具有小晶格失配的ZnO衬底。在300 K下测得的阴极发光光谱在5.9 eV附近显示出清晰的AlN近带边峰。PLD低温生长技术和ZnO衬底的使用对于紫外发光器件的制造将是相当有吸引力的。
We have grown a-plane AlN films on ZnO substrates using room temperature epitaxial GaN buffer layers by pulsed laser deposition (PLD). The basal plane stacking fault density of these AlN(1120) films, as estimated from X-ray rocking curve measurements, is as low as 1.1×105 cm-1, which is attributed to the use of ZnO substrates with a small lattice mismatch. Cathode luminescence spectra measured at 300 K exhibited a clear near band-edge peak of AlN at around 5.9 eV. The use of a PLD low-temperature growth technique and ZnO substrates would be quite attractive for the fabrication of ultraviolet light-emitting devices.