Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)
Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)
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DOI：
10.1109/led.2015.2437715
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发表时间：
2015-06
影响因子：
4.9
通讯作者：
Y. Jhan;V. Thirunavukkarasu;Cheng-Ping Wang;Yung-Chun Wu
中科院分区：
文献类型：
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作者：
Y. Jhan;V. Thirunavukkarasu;Cheng-Ping Wang;Yung-Chun Wu
通过求解漂移扩散和密度梯度耦合模型，得到了lg=1 nm和lg=3 nm的硅(Si)和锗(Ge)超薄体无结场效应晶体管(UTB-JLFET)。模拟结果表明，只要采用UTB，Si和Ge沟道均可用于超短沟道器件。由于采用了UTB，超短沟道器件不需要遵循Teh=lg/3的经验规则。此外，GE UTB-JLFET 6T-SRAM单元具有149 mV的合理静态噪声裕度。电路性能表明，UTB-JLFET可用于亚5 nm工艺节点。
Silicon (Si) and Germanium (Ge) ultrathin body junctionless field-effect transistor (UTB-JLFET) with LG= 1 nm and LG = 3 nm were demonstrated by solving the coupled drift-diffusion and density-gradient model. The simulation results show that the Si and Ge channel can be used in ultrashort channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule of Teh = LG/3. Furthermore, Ge UTB-JLFET 6T-SRAM cell has reasonable static noise margin value of 149 mV. The circuit performances reveal that UTB-JLFET can be used for sub-5-nm CMOS technology nodes.