zT=1.1 in CuInTe2 Solid Solutions Enabled by Rational Defect Engineering
zT=1.1 in CuInTe2 Solid Solutions Enabled by Rational Defect Engineering
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Rational 缺陷工程支持 CuInTe2 固体解决方案中的 zT=1.1
DOI：
10.1021/acsaem.9b01241
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发表时间：
2020
影响因子：
6.4
通讯作者：
Zhou Xiaoyuan
中科院分区：
文献类型：
--
作者：
Yan Yanci;Lu Xu;Wang Guoyu;Zhou Xiaoyuan
In this study, the synthesis and thermoelectric performance of CuInTe2–In2Te3and Cu0.85Ag0.15InTe2–In2Te3solid solutions are reported. The experimental results associated with model fitting reveal that the cation vacancies generated by creating solid solutions with a compound with a smaller cation-to-anion ratio can strongly scatter phonons with high frequency, which remarkably decrease the total as well as lattice thermal conductivity of the CuInTe2system and finally realize an enhanced thermoelectric properties compared to the pristine sample. Furthermore, substitutional Ag/Cu defects integrated with vacancies lead to a further reduction in lattice thermal conductivity. With the benefit from the rational defect design, a high figure of merit of 1.1 is gained at 840 K for the sample (Cu0.85Ag0.15InTe2)0.98(In2Te3)0.02. In addition, a 188% improvement on average zT is obtained. This work provides an effective method for boosting thermoelectric performance of chalcopyrite compounds by defect engineering on multiple types of defects.
