Large Qxf product for HBAR using Smart Cut ™ transfer of LiNbO3 thin layers onto LiNbO3 substrate
Large Qxf product for HBAR using Smart Cut ™ transfer of LiNbO3 thin layers onto LiNbO3 substrate
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用于 HBAR 的大型 Qxf 产品，使用 Smart Cut™ 将 LiNbO3 薄层转移到 LiNbO3 基板上
DOI：
10.1109/ultsym.2008.0049
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Ballandras
中科院分区：
文献类型：
--
作者：
M. Pijolat;A. Reinhardt;E. Defay;C. Deguet;D. Mercier;M. Aid;J. Moulet;B. Ghyselen;D. Gachon;S. Ballandras
在本文中，我们提出了一种新的方法，用于HBAR器件，使用Smart Cuttrade技术获得薄的均匀的LiNbO3 x切割单晶薄膜。亚微米层成功转移到LiNbO3手柄晶圆上。在1.95 GHz附近进行了射频表征，并提取了超过40000的质量因子，证明了Smart Cut贸易的层转移对声学设备的适用性。仿真结果与实验数据及TCF测量结果吻合良好。
In this paper, we propose a novel approach for HBAR devices using the Smart Cuttrade technology to obtain thin homogeneous X-cut single crystal films of LiNbO3. Sub-micron layers were successfully transferred onto LiNbO3 handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut trade to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper.