How to probe the spin contribution to momentum relaxation in topological insulators.
How to probe the spin contribution to momentum relaxation in topological insulators.
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如何探究拓扑绝缘体中自旋对动量弛豫的贡献
DOI：
10.1038/s41467-017-02420-4
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发表时间：
2018-01-04
影响因子：
16.6
通讯作者：
Ardavan A
中科院分区：
文献类型：
--
作者：
Nam MS;Williams BH;Chen Y;Contera S;Yao S;Lu M;Chen YF;Timco GA;Muryn CA;Winpenny REP;Ardavan A
拓扑绝缘体表现出金属表面状态，其中载流子的动量和自旋方向被锁定在一起。这种特性是拓扑绝缘体应用的核心，它保护表面态的载流子不受反向散射的影响，除非散射中心是时间反演对称性破缺（即磁性）。在这里，我们介绍了一种通过用分子装饰拓扑绝缘体表面来探测磁散射效应的方法，分子的磁自由度可以独立于其静电结构来设计。我们表明，这种方法使我们能够分离的影响，磁性和非磁性散射的微扰极限。因此，我们确认，低温下的SmB6的导电性是由表面状态和准粒子在这种状态下的动量是特别敏感的磁散射体，如预期的拓扑绝缘体。磁散射可以深刻地改变拓扑绝缘体的电子性质。在这里，Nam等人报告了一种通过用分子装饰拓扑绝缘体的表面来分离磁性和非磁性散射效应的方法。
Topological insulators exhibit a metallic surface state in which the directions of the carriers’ momentum and spin are locked together. This characteristic property, which lies at the heart of proposed applications of topological insulators, protects carriers in the surface state from back-scattering unless the scattering centres are time-reversal symmetry breaking (i.e. magnetic). Here, we introduce a method of probing the effect of magnetic scattering by decorating the surface of topological insulators with molecules, whose magnetic degrees of freedom can be engineered independently of their electrostatic structure. We show that this approach allows us to separate the effects of magnetic and non-magnetic scattering in the perturbative limit. We thereby confirm that the low-temperature conductivity of SmB6 is dominated by a surface state and that the momentum of quasiparticles in this state is particularly sensitive to magnetic scatterers, as expected in a topological insulator. Magnetic scattering may profoundly modify the electronic properties of a topological insulator. Here, Nam et al. report a method enabling separation of the effects of magnetic and non-magnetic scattering by decorating the surface of topological insulators with molecules.
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影响因子：
3.7
作者：
Hor, Y. S.;Roushan, P.;Cava, R. J.
通讯作者：
Cava, R. J.
DOI：
10.1103/physrevb.3.2030
发表时间：
1971-01-01
期刊：
PHYSICAL REVIEW B-SOLID STATE
影响因子：
--
作者：
NICKERSON, JC;WHITE, RM;HULL, GW
通讯作者：
HULL, GW
影响因子：
8.6
作者：
Ardavan, Arzhang;Rival, Olivier;Winpenny, Richard E. P.
通讯作者：
Winpenny, Richard E. P.
影响因子：
17.1
作者：
Ghirri, Alberto;Corradini, Valdis;Affronte, Marco
通讯作者：
Affronte, Marco
影响因子：
16.6
作者：
Sánchez-Barriga J;Varykhalov A;Springholz G;Steiner H;Kirchschlager R;Bauer G;Caha O;Schierle E;Weschke E;Ünal AA;Valencia S;Dunst M;Braun J;Ebert H;Minár J;Golias E;Yashina LV;Ney A;Holý V;Rader O
通讯作者：
Rader O