Thermal decomposition of bismuth oxysulfide from photoelectric Bi2O2S to superconducting Bi4O4S3.
Thermal decomposition of bismuth oxysulfide from photoelectric Bi2O2S to superconducting Bi4O4S3.
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DOI：
10.1021/am5092159
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发表时间：
2015-02
影响因子：
9.5
通讯作者：
Xian Zhang;Yufeng Liu;Ganghua Zhang;Yingqi Wang;Hui Zhang;Fuqiang Huang
中科院分区：
文献类型：
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作者：
Xian Zhang;Yufeng Liu;Ganghua Zhang;Yingqi Wang;Hui Zhang;Fuqiang Huang
通过将氧添加到 Bi2S3 的链状硫化铋中，产生了两种有趣的功能化合物：Bi2O2S（光电）和 Bi4O4S3（超导），其中含有类 PbO [Bi2O2] 层。通过简便的水热法合成了间接带隙为 1.12 eV 的纳米级 Bi2O2S 晶体。该半导体在室温可见光灯照射下表现出优异的光电响应。理论计算和堆积因子模型均表明松散堆积的Bi2O2S是一种优异的光电材料。当 Bi2O2S 相在真空石英管中于 500 °C 下退火时，获得 Bi4O4S3 纳米晶体。粉末X射线衍射和电子显微镜分析（SEM、TEM、EDX）证实了斜方Bi2O2S热分解为四方Bi4O4S3。根据电阻率和磁化率的温度依赖性测量，观察到 Bi4O4S3 的超导转变温度为 4.6 K。我们的研究结果还提供了一种利用热分解制备新相而无需高温反应的新方法。
With the addition of oxygen into the chain-like bismuth sulfide of Bi2S3, there are two interesting functional compounds of Bi2O2S (photoelectric) and Bi4O4S3 (superconducting) containing the PbO-like [Bi2O2] layers. Nanoscale Bi2O2S crystals with an indirect band gap of 1.12 eV are synthesized via a facile hydrothermal method. This semiconductor shows excellent photoelectric response under the irradiation of visible light lamp at room temperature. Theoretical calculations and packing factor model both indicate that the loosely packed Bi2O2S is an excellent photoelectric material. When the Bi2O2S phase was annealed at 500 °C in an evacuated quartz tube, nanocrystals of Bi4O4S3 were obtained. The powder X-ray diffraction and electron microscope analyses (SEM, TEM, EDX) confirmed the thermal decomposition from orthorhombic Bi2O2S to tetragonal Bi4O4S3. The superconducting transition temperature of Bi4O4S3 was observed to be 4.6 K from the temperature-dependence measurements of electrical resistivity and magnetic susceptibility. Our results also provide a new method utilizing thermal decomposition to prepare a new phase without high temperature reaction.