Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band
复制标题
电信 C 波段硅基单量子点发射
DOI：
10.1021/acsphotonics.7b00276
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发表时间：
2017
期刊：
影响因子：
7
通讯作者：
Orchard J
中科院分区：
文献类型：
--
作者：
Orchard J
我们报道了从生长在Si衬底上的InAs量子点结构中观察到的电信C波段（1530-1565 nm）的单量子点（QD）发射。通过用薄的GaAsSb层覆盖InAs量子点来实现发射的大的红移。在长达1540 nm的波长处观察到代表来自单个QD的发射的尖锐线。比较的光学性质的名义上相同的有源区结构生长在GaAs衬底上。来自Si基系统的1500 nm处的单QD发射具有与当前光纤兼容的单光子源的潜力，并且降低了与驱动电子器件集成的复杂性。
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.