Unstressed carbon-metal films deposited by thermionic vacuum arc method
Unstressed carbon-metal films deposited by thermionic vacuum arc method
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发表时间：
2006
影响因子：
0.5
通讯作者：
C. Lungu;I. Mustaţă;G. Musa;A. Lungu;O. Brinza;C. Moldovan;C. Rotaru;R. Iosub;F. Sava;M. Popescu;R. Vlǎdoiu;V. Ciupină;G. Prodan;N. Apetroaei
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作者：
C. Lungu;I. Mustaţă;G. Musa;A. Lungu;O. Brinza;C. Moldovan;C. Rotaru;R. Iosub;F. Sava;M. Popescu;R. Vlǎdoiu;V. Ciupină;G. Prodan;N. Apetroaei
提出了一种基于热离子真空电弧等离子体技术生长MEMS用金属碳零应力薄膜的新方法。所选择的制备金属碳膜的方法使用由外部加热的阴极发射的电子束，该阴极由高阳极电压加速。在阴极和阳极之间施加高电压（1-6 kV），在碳原子中点燃明亮的等离子体。为了减小薄膜内应力，提高薄膜的附着力，采用了Fe、Cr、Al、Ni等过渡层和梯度过渡层。用XPS、XRD、AFM和椭偏仪对薄膜进行了表征。
A novel method based on thermo-ionic vacuum arc plasma was developed to grow metal-carbon zero stress films for MEMS applications. The method chosen to prepare metal-carbon films uses an electron beam emitted by an externally heated cathode accelerated by a high anodic voltage. Applying a high voltage (1-6 kV) between cathode and anode bright plasma was ignited in carbon atoms. In order to minimize the internal stress and to get films with increased adherence, interlayer and graded interlayer with Fe, Cr, Al and Ni was deposited. The prepared films were characterized by XPS, XRD, AFM and ellipsometry.