Thermal tuning of silicon terahertz whispering-gallery mode resonators
Thermal tuning of silicon terahertz whispering-gallery mode resonators
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DOI：
10.1063/1.5036539
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发表时间：
2018-07
影响因子：
4
通讯作者：
D. Vogt;Angus Harvey Jones;R. Leonhardt
中科院分区：
文献类型：
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作者：
D. Vogt;Angus Harvey Jones;R. Leonhardt
We investigate thermal tuning of an ultra-high quality (Q) terahertz (THz) whispering-gallery mode resonator (WGMR) made of low loss silicon. The Si THz WGMR can be continuously tuned with a rate of about 29 MHz/K in the frequency range from 650 GHz to 666 GHz. Furthermore, we utilize the Si WGMR to extract the thermo-optic coefficient of Si at 459 GHz and 659 GHz in the temperature range from 295 K to 363 K.We investigate thermal tuning of an ultra-high quality (Q) terahertz (THz) whispering-gallery mode resonator (WGMR) made of low loss silicon. The Si THz WGMR can be continuously tuned with a rate of about 29 MHz/K in the frequency range from 650 GHz to 666 GHz. Furthermore, we utilize the Si WGMR to extract the thermo-optic coefficient of Si at 459 GHz and 659 GHz in the temperature range from 295 K to 363 K.
