Paramagnetic spin Hall magnetoresistance
Paramagnetic spin Hall magnetoresistance
复制标题
顺磁自旋霍尔磁阻
DOI：
10.1103/physrevb.104.134428
复制
发表时间：
2021
影响因子：
3.7
通讯作者：
and Eiji Saitoh
中科院分区：
文献类型：
--
作者：
Koichi Oyanagi;Juan M. Gomez-Perez;Xian-Peng Zhang;Takashi Kikkawa;Yao Chen;Edurne Sagasta;Andrey Chuvilin;Luis E. Hueso;Vitaly N. Golovach;F. Sebastian Bergeret;Felix Casanova;and Eiji Saitoh
本文报道了在顺磁绝缘体中观察到的自旋霍尔磁电阻效应。通过在低温下测量（GGG）系统中的横向电阻，发现顺磁SMR出现的强度随着磁场对准GGG的自旋而增加。所观察到的效果得到了微观SMR理论的支持，该理论提供了控制界面处的自旋输运的参数。我们的研究结果澄清了Pt/GGG界面的自旋交换机制，并通过GGG的场致磁化证明了可调的自旋转移力矩。在这方面，顺磁性绝缘体为未来的自旋电子器件提供了一个关键特性。
We report the observation of the spin Hall magnetoresistance (SMR) in a paramagnetic insulator. By measuring the transverse resistance in a(GGG) system at low temperatures, paramagnetic SMR is found to appear with an intensity that increases with the magnetic field aligning GGG's spins. The observed effect is well supported by a microscopic SMR theory, which provides the parameters governing the spin transport at the interface. Our findings clarify the mechanism of spin exchange at a Pt/GGG interface, and demonstrate tunable spin-transfer torque through the field-induced magnetization of GGG. In this regard, paramagnetic insulators offer a key property for future spintronic devices.