Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design
Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design
复制标题
通过电极图案设计增强AlGaN基深紫外发光二极管的光学性能
DOI：
10.1109/led.2019.2948952
复制
发表时间：
2019-12-01
影响因子：
4.9
通讯作者：
Kuo, Hao-Chung
中科院分区：
文献类型：
--
作者：
Chen, Qian;Dai, Jiangnan;Kuo, Hao-Chung
Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.
