Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure
Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure
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DOI：
10.1364/oe.27.019692
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发表时间：
2019-07-08
期刊：
影响因子：
3.8
通讯作者：
Kim, Jong Kyu
中科院分区：
文献类型：
--
作者：
Lee, Seung Hee;Jeong, Hokyeong;Kim, Jong Kyu
二维（2-D）六方氮化硼（h-BN）在深紫外光电子学和可见单光子源中引起了相当大的关注，然而，由于其宽带隙性质，实现电驱动光发射器仍然具有挑战性。在这里，我们报道了利用五周期Al2O3/h-BN多元异质结构和石墨烯顶部电极，在增加电场的情况下，从几层h-BN中产生电驱动的红移可见光发射。电学性质研究表明，Al2O3层作为势垒将注入载流子限制在h-BN井内，同时通过陷阱辅助隧道抑制静电击穿，从而增加辐射复合的可能性。结果表明，这种多异质结构作为一种实用、高效的基于宽带隙二维材料的电驱动光源平台具有很大的潜力。(c)根据OSA开放获取出版协议的条款，2019年美国光学学会
Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement