A silicon condenser microphone with a silicon nitride diaphragm and backplate
A silicon condenser microphone with a silicon nitride diaphragm and backplate
复制标题
具有氮化硅振膜和背板的硅电容麦克风
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
P. Bergveld
中科院分区：
文献类型：
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作者：
P. Scheeper;W. Olthuis;P. Bergveld
提出并测试了一种新的电容式传声器设计，该设计可采用牺牲层技术制造。麦克风背板是1 μ m PECVD氮化硅薄膜，具有高密度的声学孔（120-525孔mm-2），覆盖有薄Ti/Au电极。具有1.5*1.5 mm振膜的麦克风在100 Hz和14 kHz之间显示出平坦的频率响应，并且使用16 V的偏置电压时灵敏度约为2 mV Pa-1。这些值与具有高度穿孔背板的其他硅麦克风相当。新麦克风设计的主要优点是它可以在单个晶片上制造，因此不需要键合技术。
A new condenser microphone design, which can be fabricated using the sacrificial layer technique, is proposed and tested. The microphone backplate is a 1 mu m PECVD silicon nitride film with a high density of acoustic holes (120-525 holes mm-2), covered with a thin Ti/Au electrode. Microphones with a 1.5*1.5 mm diaphragm show a flat frequency response between 100 Hz and 14 kHz and a sensitivity of about 2 mV Pa-1 using a bias voltage of 16 V. These values are comparable to those of other silicon microphones with highly perforated backplates. The major advantage of the new microphone design is that it can be fabricated on a single wafer so that no bonding techniques are required.