Very stable low band gap polymer for charge storage purposes and near-infrared applications
Very stable low band gap polymer for charge storage purposes and near-infrared applications
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DOI：
10.1021/cm034115o
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发表时间：
2003-11
影响因子：
8.6
通讯作者：
G. Sonmez;H. Meng;F. Wudl
中科院分区：
文献类型：
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作者：
G. Sonmez;H. Meng;F. Wudl
合成了一种新型的低带隙聚合物聚（1，3-双（2 '-[3'，4 '-亚乙二氧基]噻吩）-苯并[c]噻吩-N-2 "-乙基己基-4，5-二甲酰亚胺）P（DEDOT-ITNIm）。电化学制备的聚合物膜是非常稳定的过氧化p-掺杂和稳定的n-掺杂。从电化学和光谱电化学的聚合物膜，1.10 eV的低的带隙。ITO涂覆的载玻片上的薄聚合物膜在p-和n-掺杂时显示出优异的光学性质，这些是可见光区域中聚合物的透明度和颜色的小变化，但在近红外区域中变化更大。与导电聚合物家族的其他成员相比，P（DEDOT-ITNIm）膜的电荷存储容量非常高，使得该聚合物成为用于电荷存储目的的良好候选物;例如，作为超级电容器。
A new low band gap polymer, poly(1,3-bis(2‘-[3‘,4‘-ethylenedioxy]thienyl)-benzo[c]thiophene-N-2‘ ‘-ethylhexyl-4,5-dicarboximide) P(DEDOT-ITNIm), was synthesized. Electrochemically prepared polymer films were very stable to overoxidation upon p-doping and stable upon n-doping. The low band gap of the polymer films, 1.10 eV, was determined from electrochemistry and spectroelectrochemistry. Thin polymer films on ITO-coated glass slides showed exceptional optical properties upon both p- and n-doping, these were small changes in the transparency and color of the polymer in the visible region but more dramatic changes in the near-infrared region. The charge storage capacity of P(DEDOT-ITNIm) films is very high when compared to other members of the conducting polymers family, making this polymer a good candidate for charge storage purposes; e.g., as supercapacitors.