InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE
InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE
复制标题
倾斜 RIE 制造的 InGaAsP/InP 蚀刻镜面激光器
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
Y. Noguchi
中科院分区：
文献类型：
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作者：
H. Saito;Y. Noguchi
本文介绍了用倾斜RIE法，以TiO_2为掩模，Cl_2-Ar混合气体对InP晶体进行刻蚀的研究结果。本文研究了激光器垂直刻蚀端面的制作方法和垂直刻蚀端面上精细条纹的来源。从理论和实验两方面讨论了刻面粗糙度和刻面倾角对刻面反射率的影响。采用倾斜RIE工艺制备了InGaAsP/InP激光器，并对其端面进行了刻蚀。这些蚀刻镜激光器的典型CW阈值电流在25°C下为20至30 mA，并且一个面的光输出功率超过25 mW。在50°C和约5 mW下进行6050小时老化试验的结果表明，InGaAsP/InP蚀刻镜激光器具有很高的可靠性。
The results of an etching study on InP crystal by inclined RIE, using TiO2 mask and Cl2-Ar mixture gas, are described. Fabrication of vertical etched facets for lasers and the origins of a fine striation pattern on the vertical etched facet are investigated. Influences on the facet reflectivity of the etched mirror lasers by the facet roughness and inclination are discussed both theoretically and experimentally. InGaAsP/InP lasers with both facets etched were fabricated by inclined RIE. Typical CW threshold currents of these etched-mirror lasers range from 20 to 30 mA at 25°C and the light-output power from one facet exceeds 25 mW. Results of the 6050-h aging test at 50°C and about 5 mW show that InGaAsP/InP etched-mirror lasers can be excepted to be highly reliable.