HAXPES Measurements of Heterojunction Band Alignment
HAXPES Measurements of Heterojunction Band Alignment
复制标题
异质结能带对准的 HAXPES 测量
DOI：
10.1007/978-3-319-24043-5_15
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发表时间：
2016
影响因子：
3.2
通讯作者：
J. Woicik
中科院分区：
文献类型：
--
作者：
C. Weiland;A. Rumaiz;J. Woicik
异质结，即界面处材料的突变，是现代电子设备的一个不可或缺的特征。异质结处电子能级的排列可用于定制跨界面的电荷转移，例如改善载流子注入或阻止漏电流。本章概述了对异质结能级排列的理解，并提供了硬 X 射线光电子能谱 (HAXPES) 为理解该主题提供的独特贡献的具体示例。许多理论方法已应用于异质结能带对准，并且在某些但并非所有情况下预测能带对准值方面取得了一些成功。能带对准测量是使用电子测量（例如内部光电发射）以及直接测量价带或通过使用核心能级的光电子能谱来进行的。给出了通过这些技术进行的测量的示例。 HAXPES 测量提供了更大的分析深度，从而提供了测量通过工业相关技术制造的“真实”异质结的优势。 HAXPES 已被用来查询带偏移工程中层间厚度的基本限制，以及光伏应用中新材料的使用。介绍了这些和其他应用。
Heterojunctions, the abrupt change of materials at interfaces, are an integral feature of modern electronic devices. The alignment of electronic energy levels at a heterojunction can be used to tailor charge transfer across the interface, for example to improve carrier injection or to block leakage current. An overview of the understanding of heterojunction energy-level alignment with specific examples of the unique contributions that hard X-ray photoelectron spectroscopy (HAXPES) provides to the understanding of this topic is presented in this chapter. Many theoretical approaches have been applied to heterojunction band alignment, and have had some success in predicting band-alignment values in some but not all cases. Band-alignment measurements have been made using electronic measurements such as internal photoemission, as well as photoelectron spectroscopy either measuring valence bands directly or through the use of core levels. Examples of measurements made by these techniques is presented. HAXPES measurements provide a greater analysis depth, which provides the advantage of measuring “real” heterojunctions fabricated by industrially-relevant techniques. HAXPES has been used to query the fundamental limitations on interlayer thickness for band-offset engineering, and the use of new materials for photovoltaic applications. These and other applications are presented.
影响因子：
2.5
作者：
E. Muller;J. Smedley;J. Bohon;Xi Yang;M. Gaowei;John Skinner;G. de Geronimo;M. Sullivan;M. Allaire;J. Keister;L. Berman;A. Héroux
通讯作者：
E. Muller;J. Smedley;J. Bohon;Xi Yang;M. Gaowei;John Skinner;G. de Geronimo;M. Sullivan;M. Allaire;J. Keister;L. Berman;A. Héroux