Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-Incorporated Si Films
Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-Incorporated Si Films
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掺锗硅薄膜横向固相外延中应力诱导的反常生长
DOI：
10.1143/jjap.34.20
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发表时间：
1995
影响因子：
1.5
通讯作者：
Hiroshi Ishiwara Hiroshi Ishiwara
中科院分区：
文献类型：
--
作者：
J. Oh;D. Kim;Hiroshi Ishiwara Hiroshi Ishiwara
研究了沉积在具有[010]籽晶开口的SiO2/Si(100)结构上的掺Ge非晶硅薄膜的横向固相外延(LSPE)特性。研究发现，在P掺杂非晶硅薄膜中，掺入0.5at.%Ge原子后，600℃下的LSPE生长速率提高了约六倍，最大生长长度约为21μm。还发现，在低于 600°C 的温度下退火时，具有 1 at.% Ge 原子的薄膜中距籽晶边缘约 2 µm 的长度处的生长停止几个小时，并且随着退火时间的延长，生长再次进行。为了阐明异常生长速率的根源，使用微探针拉曼光谱法测量了薄膜中的残余应力，得出的结论是，增强生长的根源是薄膜中的残余应力。最后，提出掺Ge应力效应可以用Si衬底上Si1-x Gex薄膜假晶生长的临界厚度理论来解释。
Lateral solid-phase epitaxy (LSPE) characteristics of Ge-incorporated amorphous Si films which are deposited on SiO2/Si (100) structures with [010] seed openings are investigated. It has been found in P-doped amorphous Si films that the LSPE growth rate at 600° C is enhanced about sixfold by incorporation of 0.5 at.% Ge atoms, and that the maximum growth length is about 21 µ m. It has also been found that the growth in the film with 1 at.% Ge atoms stops for a few hours upon annealing at temperatures lower than 600° C at a length of about 2 µ m from the seed edge and it proceeds again as annealing time is extended. To clarify the origin of the anomalous growth rate, the residual stress in the films has been measured using microprobe Raman spectrometry, and it is concluded that the origin of the enhanced growth is the residual stress in the films. Finally, it is suggested that the Ge-incorporated stress effect may be explained by the critical thickness theory in pseudomorphic growth of Si1-x Gex films on Si substrates.