Thermally formed conducting filaments in a single-crystalline NiO thin film
Thermally formed conducting filaments in a single-crystalline NiO thin film
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DOI：
10.1063/1.3309709
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发表时间：
2010-02-15
影响因子：
4
通讯作者：
Shimakawa, Yuichi
中科院分区：
文献类型：
--
作者：
Kawai, Masanori;Ito, Kimihiko;Shimakawa, Yuichi
研究了热退火对 Pt0.8Ir0.2 底部电极上生长的单晶 NiO 薄膜电阻切换特性的影响。在 430 摄氏度以上对 NiO 薄膜进行退火，会在单晶 NiO 中产生导电丝，并在电复位偏置电压下将低电阻状态转变为高电阻状态。镍空位等晶体缺陷的重排在导电丝的形成中发挥着重要作用。这种“热成型”本质上与“电成型”相同，但不需要大的偏置电压来在单极开关器件中形成初始导通状态。
Effects of thermal annealing on resistance switching properties of a single-crystalline NiO thin film grown on a Pt0.8Ir0.2 bottom electrode were investigated. Annealing the NiO thin film above 430 degrees C produced conducting filaments in the single-crystalline NiO and the resulting low-resistance state changed to a high-resistance state at an electrical reset bias voltage. Rearrangements of crystalline defects such as Ni vacancies play a role in forming the conducting filaments. This "thermal forming" is essentially the same as "electrical forming" but does not need large bias voltages to make the initially ON state in unipolar switching devices.