Electron spin dynamics study of bulk p-GaAs: The screening effect
Electron spin dynamics study of bulk p-GaAs: The screening effect
复制标题
DOI：
10.1063/1.4775683
复制
发表时间：
2013-01
影响因子：
4
通讯作者：
Chunbo Zhao;Tengfei Yan;H. Ni;Z. Niu;Xinhui Zhang
中科院分区：
文献类型：
--
作者：
Chunbo Zhao;Tengfei Yan;H. Ni;Z. Niu;Xinhui Zhang
本文利用时间分辨磁光克尔旋转技术研究了分子束外延生长的掺Be的p型GaAs体材料的电子自旋动力学。系统地研究了自旋弛豫/退相时间T1和T2* 随空穴掺杂密度、光激发密度以及温度的变化。实验上观察到自旋弛豫时间T1和T2* 与空穴掺杂浓度的关系，这与自旋动力学Bloch方程理论的预言相一致[J. Jiang和M. Wu，Phys. Rev. B 79，125206（2009）]。D 'yakonov-Perel机理[M. Dyakonov和V. Perel，Sov. Phys. Solid State 13，3023（1972）]被讨论为主导p-GaAs中的电子自旋弛豫过程，其中空穴屏蔽效应被证明起重要作用。
In this work, the electron spin dynamics of bulk p-GaAs doped with Be grown by molecular beam epitaxy is investigated by using the time-resolved magneto-optical Kerr rotation technique. The spin relaxation/dephasing times T1 and T2* are systematically investigated as a function of hole doping density and photo-excitation density as well as temperature. The complex hole doping density dependence of spin relaxation times T1 and T2* is observed experimentally, which agrees well with predictions of the kinetic spin Bloch equation theory published previously [J. Jiang and M. Wu, Phys. Rev. B 79, 125206 (2009)]. D'yakonov-Perel's mechanism [M. Dyakonov and V. Perel, Sov. Phys. Solid State 13, 3023 (1972)] is discussed to dominate the electron spin relaxation process in p-GaAs, with the effect of hole screening proven to play an important role.