Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide- Semiconductor-Field-Effect-Transistors
Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide- Semiconductor-Field-Effect-Transistors
复制标题
纳米金属氧化物半导体场效应晶体管中随机掺杂剂波动和功函数变化导致的相关性对栅极电容变化的影响
DOI：
10.1166/jno.2019.2644
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发表时间：
2019
影响因子：
0.6
通讯作者：
Mi Lin
中科院分区：
文献类型：
--
作者：
Wei-Feng Lü;Liang Dai;Guang-Yi Wang;Mi Lin
本文报道了统计相关性对22纳米金属氧化物半导体场效应晶体管中随机掺杂波动和功函数变化效应引起的总栅极电容变化的影响。用散点图观察到相关性；此外，还计算了不同变化源对栅极电压依赖性的相关系数。结果表明，统计相关性严重影响栅极电容变异性的估计。此外，我们的模拟表明，由于这些相关性，随机掺杂波动和工作函数变化效应引起的栅极电容变化应该由高阶矩（如偏度和峰度）更好地描述。
In this paper, we report the result of an investigation on the impact of statistical correlation on total gate capacitance variability due to random dopant fluctuation and work-function variation effects in 22-nm metaloxide-semiconductor field-effect transistors. A correlation was observed using scatter plots; in addition, correlation coefficients for different variation sources on gate voltage dependence were computed. Results show that the statistical correlation severely influences the estimation of gate capacitance variability. Furthermore, from our simulations, it has been shown that owing to these correlations, the gate capacitance variability caused by random dopant fluctuation and work-function variation effects should be better described by higher order moments such as skewness and kurtosis.