The Influence of ZnF2 Doping on the Electrical Properties and Microstructure in Bi2O3–ZnO‐Based Varistors
The Influence of ZnF2 Doping on the Electrical Properties and Microstructure in Bi2O3–ZnO‐Based Varistors
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DOI：
10.1111/j.1551-2916.2009.03386.x
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发表时间：
2010
影响因子：
3.9
通讯作者：
Lihong Cheng;Liaoying Zheng;Guorong Li;Kai-Yun Yuan;Yan Gu;Fu-Ping Zhang
中科院分区：
文献类型：
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作者：
Lihong Cheng;Liaoying Zheng;Guorong Li;Kai-Yun Yuan;Yan Gu;Fu-Ping Zhang
为了探索氧化锌的潜在应用，采用固相反应法制备了不同含量(0.00~0.80%)的氧化锌压敏陶瓷。研究了F掺杂对氧化锌压敏陶瓷微结构和电性能的影响。随着氟化锌含量的增加，氧化锌的平均粒径从4.93μm增大到6.48 ppm。实验结果表明，随着ZnF2含量的增加，击穿电压从617V/mm降至367V/mm，而非线性系数变化不大。然而，漏电流略有增加。此外，随着ZnF_2含量的增加，施主浓度从0.669×10~(18)cm增加到8.720×10~(18)cm−_3。研究表明，ZnF_2作为助烧剂对晶粒的生长起到类似的促进作用，而块体中的替代F原子起到施主的作用来提高施主浓度。
ZnO varistors with different amounts of ZnF2 from 0.00 to 0.80 mol% were prepared using a solid-state reaction technique, to explore the potential application of ZnO. The F-doping effects on the microstructure and electrical properties of ZnO-based varistors were investigated. The average grain size of ZnO increased from 4.93 to 6.48 μm as the ZnF2 content increased. Experimental results showed that as the ZnF2 content increased, the breakdown voltage decreased from 617 to 367 V/mm, and the nonlinear coefficient did not change much. However, a slight increase was observed in the leakage current. Besides, when the ZnF2 content increased, the donor concentration increased from 0.669 × 1018 to 8.720 × 1018 cm−3. The study indicated that ZnF2 played a similar role as sintering aids to promote grain growth and the substitutional F atoms in the bulk served as a donor to increase the donor concentration.