Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
复制标题
具有 InGaN/GaN 量子阱的 InGaN 纳米点混合体的生长和表征
DOI：
10.1007/s00339-012-7112-2
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Y. Zheng
中科院分区：
文献类型：
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作者：
G. Yang;P. Chen;Z. G. Yu;B. Liu;Z. Xie;X. Xiu;Z. L. Wu;F. Xu;Z. Xu;X. Hua;P. Han;Y. Shi;R. Zhang;Y. Zheng
在经过SiO2预处理的GaN表面成功生长了均匀的InGaN纳米点。发现InGaN纳米点的直径约为20 nm，高度约为5 nm。在InGaN纳米点表面生长两个周期的InGaN/GaN量子威尔斯阱后，由于增强的相分离现象，InGaN阱层中仍然形成纳米点结构。通过InGaN/GaN量子威尔斯阱结构的InGaN纳米点的光致发光（PL）谱，观察到了不同性质的双色发光。随着PL激发功率的增加，低能峰发生明显的蓝移，线宽变宽，而高能峰发生轻微的蓝移，线宽变窄。因此，这两个峰分别被指定为来自富In纳米点和来自具有铟含量的InGaN/GaN量子威尔斯的量子态跃迁。
Uniform InGaN nanodots were successfully grown on SiO2pretreated GaN surface. It was found that the InGaN nanodots were 20 nm in diameter and 5 nm in height, approximately. After the growth of two periods of InGaN/GaN quantum wells on the surface of InGaN nanodots, nanodot structure still formed in the InGaN well layer caused by the enhanced phase separation phenomenon. Dual-color emissions with different behavior were observed from photoluminescence (PL) spectrum of InGaN nanodots hybrid with InGaN/GaN quantum wells. A significant blueshift and a linewidth broadening were measured for the low-energy peak as the increase of PL excitation power, while a slight blueshift and a linewidth narrowing occurred for the high-energy peak. Accordingly, these two peaks were assigned to be from the In-rich nanodots and quantized state transition from the InGaN/GaN quantum wells with indium content, respectively.