Broadband external cavity tunable quantum dot lasers with low injection current density.
Broadband external cavity tunable quantum dot lasers with low injection current density.
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DOI：
10.1364/oe.18.008916
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发表时间：
2010-04
期刊：
影响因子：
3.8
通讯作者：
X. Lv;P. Jin;Weibiao Wang;Zhaoyong Wang
中科院分区：
文献类型：
--
作者：
X. Lv;P. Jin;Weibiao Wang;Zhaoyong Wang
实现了基于InAs/GaAs量子点的宽带光栅耦合外腔激光器。在低连续波注入电流密度(458A/cm(2))下，器件的波长调谐范围为1141.6~1251.7 nm。可调带宽连续覆盖量子点的基态和第一激发态的光发射。研究了腔长和减反射面镀膜对器件性能的影响。结果表明，减反射面涂层将调谐带宽扩展到~150 nm，阈值电流密度明显增加，这归因于光场与器件有源区量子点之间相互作用的减弱。
Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to ~150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.