Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
复制标题
DOI：
10.1016/j.sse.2015.08.020
复制
发表时间：
2016
影响因子：
1.7
通讯作者：
G. V. Luong;S. Strangio;A. Tiedemannn;S. Lenk;S. Trellenkamp;K. Bourdelle;Qing-Tai Zhao;S. Mantl
中科院分区：
文献类型：
--
作者：
G. V. Luong;S. Strangio;A. Tiedemannn;S. Lenk;S. Trellenkamp;K. Bourdelle;Qing-Tai Zhao;S. Mantl
