A generalized integral charge-control relation and its application to compact models for silicon-based HBT's
A generalized integral charge-control relation and its application to compact models for silicon-based HBT's
复制标题
广义积分充电控制关系及其在硅基 HBT 紧凑模型中的应用
DOI：
10.1109/16.239746
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
H. Rein
中科院分区：
文献类型：
--
作者：
M. Schroter;M. Friedrich;H. Rein
推导了 Gummel 积分充电控制关系 (ICCR) 的广义版本，与经典 ICCR 相比，它也适用于 HBT。作为这种广义 ICCR (GICCR) 的缺点，通过测量不可能将总少数电荷分离为不同晶体管区域的贡献。因此，提出了 GICCR 的简化版本，其参数可以通过简单的方式通过实验确定感兴趣的操作范围。这种方法可以为开发用于电路仿真的紧凑 HBT 模型提供强大的基础。通过对几种具有不同掺杂分布和Ge摩尔分数的实用SiGe基HBT的一维和二维器件模拟，验证了不同方法的有效性。 >
A generalized version of Gummel's integral charge-control relation (ICCR) is derived, which-in contrast to the classical ICCR-is valid also for HBTs. As a drawback of this generalized ICCR (GICCR) the required separation of the total minority charge into the contributions of the different transistor regions is not possible by measurements. Therefore, a simplified version of the GICCR is presented the parameters of which can be determined experimentally in a simple manner for the operating range of interest. This approach could provide a powerful basis for the development of compact HBT models for circuit simulation. The validity of the different approaches is verified by one- and two-dimensional device simulation for several practical SiGe-base HBTs with different doping profiles and Ge mole fractions. >