Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers

Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers
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用于低阈值紫外等离子体纳米激光器的单晶铝膜的分子束外延

DOI:
10.1063/1.5033941
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发表时间:
2018-06-04
影响因子:
4
通讯作者:
Shen, Bo
Shen, Bo
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Liu, Shuanglong;Sheng, Bowen;Shen, Bo

文献摘要

被引文献

相似文献

采用分子束外延技术在Si(111)衬底上生长了高质量的单晶铝薄膜。Al膜的(111)平面的X射线衍射摇摆曲线显示,对于在100 °C下生长的样品,半峰全宽为564弧秒,其中表面是原子级平坦的,在3 × 3 μm2的扫描面积中均方根粗糙度为0.40 nm。利用这种高质量的铝膜,我们已经成功地实现了室温紫外表面等离子体激元纳米激光器,其波长为360 nm,阈值低至0.2 MW/cm ~ 2,这为单晶铝膜在等离子体器件中的潜在应用提供了有力的证据。
High-quality single-crystalline aluminum films have been grown on Si(111) substrates by molecular beam epitaxy. The x-ray diffraction rocking curve of the (111) plane of the Al film shows a full width at half maximum of 564 arc sec for the sample grown at 100 °C, where the surface is atomically flat with a root-mean-square roughness of 0.40 nm in a scanned area of 3 × 3 μm2. By using such a high-quality Al film, we have demonstrated a room temperature ultraviolet surface-plasmon-polariton nanolaser at a wavelength of 360 nm with a threshold as low as ∼0.2 MW/cm2, which provides a powerful evidence for potential application of the single-crystalline Al film in plasmonic devices.