Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
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DOI：
10.1063/1.1428404
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发表时间：
2001-12-24
影响因子：
4
通讯作者：
Okumura, H
中科院分区：
文献类型：
--
作者：
Chichibu, SF;Sugiyama, M;Okumura, H
利用变温时间分辨光致发光（TRPL）技术研究了应变立方（c-）In 0. 1Ga 0. 9 N/c-GaN多量子阱威尔斯中的辐射和非辐射复合动力学.与六角InGaN量子威尔斯相比，低激发光致发光峰值能量随阱厚度L的减小而适度增加，并且PL寿命对L的依赖性不强。结果清楚地表明，压电场不作用于转变过程。TRPL信号很好地拟合为从10到300 K的拉伸指数衰减，表明自发发射是由于位于无序量子纳米结构（例如In簇）中的激子的辐射复合。局域态被认为在300 K（量子盘大小）具有二维态密度，因为辐射寿命随着温度的升高而增加。(C)2001年美国物理学会。
Radiative and nonradiative recombination dynamics in strained cubic (c-) In0.1Ga0.9N/c-GaN multiple quantum wells were studied using temperature-dependent time-resolved photoluminescence (TRPL) spectroscopy. In contrast to hexagonal InGaN quantum wells, low-excitation photoluminescence peak energy increased moderately with decreasing well thickness L and the PL lifetime did not strongly depend on L. The results clearly indicated that the piezoelectric field was not acting on the transition process. The TRPL signal was well fitted as a stretched exponential decay from 10 to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nanostructures such as In clusters. The localized states were considered to have two-dimensional density of states at 300 K (quantum disk size), since the radiative lifetime increased with increasing temperature above 150 K.(C) 2001 American Institute of Physics.