Very large spot size effect in nanosecond laser drilling efficiency of silicon
Very large spot size effect in nanosecond laser drilling efficiency of silicon
复制标题
DOI：
10.1364/oe.18.023488
复制
发表时间：
2010-10-25
期刊：
影响因子：
3.8
通讯作者：
Diaspro, A.
中科院分区：
文献类型：
--
作者：
Brandi, F.;Burdet, N.;Diaspro, A.
研究了纳秒级准分子激光在硅片上冲击打孔时光斑直径的影响。实验结果表明，在7.5 ~ 13.2J/cm（2）的恒定注量范围内，当光斑直径从220 μ m减小到9 μ m时，烧蚀效率提高了10倍。当使用60 ps深紫外激光脉冲时，不存在这种效应。一个模型的开发，解释的研究结果在羽屏蔽效果的激光脉冲。该模型也成功地应用于聚酰亚胺和氧化铝的深紫外激光钻孔先前公布的数据。(C)2010年美国光学学会
The effect of the spot diameter in nanosecond excimer laser percussion drilling of through via in silicon wafer is presented. Experimental results show a ten fold increase of the ablation efficiency when decreasing the spot diameter from 220 mu m to 9 mu m at constant fluence in the range 7.5 J/cm(2) to 13.2 J/cm(2). Such effect is absent when using 60 ps deep-UV laser pulses. A model is developed that explain the findings in terms of plume shielding effect on the laser pulse. The model is successfully applied also on previously published data on deep-UV laser drilling of Polyimide and Alumina. (C) 2010 Optical Society of America