Direct single electron detection with a CMOS detector for electron microscopy
Direct single electron detection with a CMOS detector for electron microscopy
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DOI：
10.1016/j.nima.2005.03.023
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发表时间：
2005-07-01
影响因子：
1.4
通讯作者：
Evans, A
中科院分区：
文献类型：
--
作者：
Faruqi, AR;Henderson, R;Evans, A
我们报告了对单层活性像素传感器（MAP）用于电子显微镜的研究的结果。地图最初是为卢瑟福·阿普尔顿实验室（Rutherford Appleton Laboratories）的天文学家设计的，安装在剑桥MRC实验室的120 kV电子显微镜（飞利浦CM12）中，以进行测试，其中包括在40和120 KEV中记录单个电子，并测量信号至关重要的信号。比率（SNR），空间分辨率和辐射灵敏度。我们的结果表明，由于SNR和分辨率出色，因此可以注册单电子。探测器的辐射损坏是明显的，剂量低，并且逐渐更大，因此其寿命限制为600,000-900,000电子/像素（大约10-15 krad）。只要该检测器可以辐射硬化以降低其辐射敏感性数百倍并增加的大小，则它将为所有类型的电子显微镜提供出色的性能。 （c）2005 Elsevier B.V.保留所有权利。
We report the results of an investigation into the use of a monolithic active pixel sensor (MAPS) for electron microscopy. MAPS, designed originally for astronomers at the Rutherford Appleton Laboratories, was installed in a 120 kV electron microscope (Philips CM12) at the MRC Laboratory in Cambridge for tests which included recording single electrons at 40 and 120 keV, and measuring signal-to-noise ratio (SNR), spatial resolution and radiation sensitivity. Our results show that, due to the excellent SNR and resolution, it is possible to register single electrons. The radiation damage to the detector is apparent with low doses and gets progressively greater so that its lifetime is limited to 600,000-900,000 electrons/pixel (very approximately 10-15 krad). Provided this detector can be radiation hardened to reduce its radiation sensitivity several hundred fold and increased in size, it will provide excellent performance for all types of electron microscopy. (c) 2005 Elsevier B.V. All rights reserved.