Photoluminescence and built-in electric field in ZnO∕Mg0.1Zn0.9O quantum wells
Photoluminescence and built-in electric field in ZnO∕Mg0.1Zn0.9O quantum wells
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DOI：
10.1063/1.2716367
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发表时间：
2007-03
影响因子：
4
通讯作者：
Baoping Zhang;Bao-lin Liu;J. Yu;Q. Wang;C. Liu;Y. Liu;Y. Segawa
中科院分区：
文献类型：
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作者：
Baoping Zhang;Bao-lin Liu;J. Yu;Q. Wang;C. Liu;Y. Liu;Y. Segawa
在4.2K下对ZnO闪烁Mg0.1Zn0.9O量子威尔斯阱宽渐变的量子阱进行了光致发光研究。清晰地观察到了从量子限制区到量子限制斯塔克区的发光演化。对于大的Lw，发射分裂为两个峰，分别归因于ZnO带边和单独局部化的载流子的发射。井层的内部电场估计为0.3MV scincm，与以前的报道相似。研究结果对ZnO量子阱基光电子器件的设计具有一定的参考价值。
Photoluminescence study of ZnO∕Mg0.1Zn0.9O quantum wells with graded well width (Lw) was carried out at 4.2K. The emission evolution from quantum confinement regime to quantum-confined Stark regime was observed clearly. For large Lw, the emission splits into two peaks which are attributed to the emissions of ZnO band edge and separately localized carriers, respectively. The internal electric field in the well layer was estimated to be ∼0.3MV∕cm, being similar to previous reports. The results are useful in designing ZnO QW based optoelectronic devices.