A high fill-factor comb-driven XY-stage with topological layer switch architecture
A high fill-factor comb-driven XY-stage with topological layer switch architecture
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具有拓扑层开关架构的高填充因子梳状驱动 XY 平台
DOI：
10.1587/elex.3.197
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
H. Toshiyoshi
中科院分区：
文献类型：
--
作者：
Kazuhiro Takahashi;M. Mita;H. Fujita;H. Toshiyoshi
我们已经开发出一种新的器件架构的梳状驱动的双万向节XY-阶段的高填充因子（阶段面积/芯片尺寸），这已实现了第一次通过拓扑分离的致动器元件在两个层：所有的电气部分（电极和互连）是在绝缘体上硅（SOI）层，而机械部件（悬浮液，框架，和XY-阶段）在基板上。由于采用了新的分层结构，致动器的整体占地面积变得很小。XY载物台在X和Y方向上独立移动19µm，并且还在对角线方向上移动。
We have developed novel device architecture of comb-driven double-gimbal XY-stage of high fill-factor (stage area / chip size), which has been realized for the first time by topologically separating the actuator elements in two layers: all the electrical parts (electrodes and interconnections) are in the Silicon-on-Insulator (SOI) layer, while the mechanical parts (suspensions, frame, and XY-stage) are in the substrate. Thanks to the new layered structures, the overall footprint of the actuator has been made small. The XY-stage moved 19µm in the X and the Y direction independently, and also in the diagonal direction.