Methodical Design Approaches to Radiation Effects Analysis and Mitigation in Flip-Flop Circuits
Methodical Design Approaches to Radiation Effects Analysis and Mitigation in Flip-Flop Circuits
复制标题
触发器电路中辐射效应分析和缓解的系统设计方法
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Sandeep Shambhulingaiah
中科院分区：
文献类型：
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作者：
L. Clark;Sandeep Shambhulingaiah
随着晶体管尺寸的不断缩小，集成电路越来越容易受到辐射颠覆的影响。本文提出了一种评估电路硬度的系统方法，以及确定有效节点间隔以防止多节点电荷收集引起的颠覆的图聚类方法。该方法是基于电路模拟的，使其高效且可供电路设计者使用。给出了实例设计，演示了对实际触发器设计的分析和聚类。最后，该方法被用来为新的强化触发器设计提供关键的节点分离，其功耗和面积分别降低了27%和19.5%。
With transistor dimensions shrinking due to continued scaling, integrated circuits are increasingly susceptible to radiation upset. This paper presents a systematic methodology for evaluating circuit hardness, as well as graph clustering approaches to determine effective node separation to protect against upset due to multiple node charge collection. The methodology is circuit simulation based, making it efficient and usable by circuit designers. Example designs are presented to demonstrate the analysis and clustering for real flip-flop designs. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 27% and 19.5% respectively.