Annealing Induced Structural Phase Change of Hexagonal‐LuFeO3 Thin Films
Annealing Induced Structural Phase Change of Hexagonal‐LuFeO3 Thin Films
复制标题
DOI：
10.1002/9781119494096.ch21
复制
发表时间：
2018-05
影响因子：
6
通讯作者：
R. Rai;D. Mckenna;Caitlin Horvatits-;J. Hart
中科院分区：
文献类型：
--
作者：
R. Rai;D. Mckenna;Caitlin Horvatits-;J. Hart
本章介绍了用射频磁控溅射系统在单晶蓝宝石和YSZ衬底上沉积的多铁lufeo3薄膜的结构、光学和磁性能。生长温度和退火是稳定六方lufeo3薄膜的关键。射频（RF）磁控溅射是一种相对经济有效的方法，也是沉积氧化物最常用的方法之一。射频磁控溅射在控制生长条件，保持化学计量和更高的沉积速率方面提供了灵活性。当晶格应变因退火而释放时，薄膜可以通过成核过程形成更大的颗粒结构，如AFM图像所示。附图显示了一个用直接能带隙模型拟合能带边缘的例子。
This chapter presents structural, optical, and magnetic properties of multiferroic LuFeO3thin films, deposited on single crystal sapphire and YSZ substrates by an RF magnetron sputtering system. Growth temperature and annealing are found to be critical to stabilize hexagonal LuFeO3thin films. Radio‐Frequency (RF) Magnetron Sputtering is relatively cost effective and one of the most commonly used methods for the deposition of oxides. An RF Magnetron Sputtering offers flexibility in terms of controlling the growth conditions, maintaining the stoichiometry, and a higher deposition rate. When the lattice strain is released due to annealing, the thin film can form bigger granular structures, as observed in the AFM image, by the nucleation process. The inset shows an example of the energy band edge fitting with the direct energy band gap model.