Significant reduction in the thermal conductivity of Si-substituted Fe2VAl epilayers
Significant reduction in the thermal conductivity of Si-substituted Fe2VAl epilayers
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Si 取代的 Fe2VAl 外延层的热导率显着降低
DOI：
10.1103/physrevb.99.054201
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发表时间：
2019
影响因子：
3.7
通讯作者：
K. Hamaya
中科院分区：
文献类型：
--
作者：
K. Kudo;S. Yamada;J. Chikada;Y. Shimanuki;T. Ishibe;S. Abo;H. Miyazaki;Y. Nishino;Y. Nakamura;K. Hamaya
我们通过实验发现，在heusler型涂层中用Si取代Al有助于显著降低导热系数，其中下一代热电材料之一不使用有毒元素。由于脱毛层的低温生长，Si取代导致脱毛层的成形度降低，从而导致V-Si反位缺陷的形成。对于层，我们可以获得低导热系数，比硅取代的大块样品低三分之一[Lue， Phys]。Rev. B 75,064204 (2007)PRBMDO1098-012110.1103/PhysRevB.75.064204]。我们讨论了低导热系数的可能原因是由于V-Si反位缺陷的存在而导致晶格导热系数低。
We experimentally find that the substitution of Si for Al in Heusler-typeepilayers contributes to the significant reduction in the thermal conductivity, in whichis one of the next-generation thermoelectric materials without using toxic elements. Because of the low-temperature growth of the epilayers, the Si substitution induces the decrease in the degree ofordering, giving rise to the formation of V-Si antisite defects in the epilayers. Forepilayers, we can obtain a low thermal conductivity of, one-third less than Si-substitutedbulk samples [Lue , Phys. Rev. B 75, 064204 (2007)PRBMDO1098-012110.1103/PhysRevB.75.064204]. We discuss that a possible origin of the low thermal conductivity is related to the low lattice thermal conductivity due to the presence of the V-Si antisite defects.