Theoretical Study on Superconductivity in Boron-Doped Diamond
Theoretical Study on Superconductivity in Boron-Doped Diamond
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DOI：
10.1143/jpsj.76.014711
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发表时间：
2006-10
影响因子：
1.7
通讯作者：
T. Shirakawa;S. Horiuchi;Y. Ohta;H. Fukuyama
中科院分区：
文献类型：
--
作者：
T. Shirakawa;S. Horiuchi;Y. Ohta;H. Fukuyama
本文用金刚石价带的简化模型研究了掺硼金刚石的超导电性。在德拜截止的瞬时相互作用假设下，我们用相干势近似（CPA）处理了B离子的替位无序效应，用梯形近似处理了空穴间吸引力的影响。从而我们计算准粒子的寿命，由于掺杂的单粒子谱的演变，和无序的超导临界温度Tc的影响。我们特别是比较我们的结果与那些超晶胞计算看到的作用，原来是至关重要的T c的混乱。
We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the attractive force between holes by the ladder approximation under the assumption of instantaneous interaction with the Debye cutoff. We thereby calculate the quasiparticle life time, the evolution of the single-particle spectra due to doping, and the effect of disorder on the superconducting critical temperature T c . We in particular compare our results with those for supercell calculations to see the role of disorder, which turns out to be of crucial importance to T c .