Effects of implantation conditions on the luminescence properties of Eu-doped GaN
Effects of implantation conditions on the luminescence properties of Eu-doped GaN
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DOI：
10.1016/s0168-583x(03)00928-5
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发表时间：
2003-05-01
影响因子：
1.3
通讯作者：
Kim, YT
中科院分区：
文献类型：
--
作者：
Nakanishi, Y;Wakahara, A;Kim, YT
在室温（RT）下，将铕（Eu）离子注入到氮化镓（GaN）外延层中，剂量范围为1 × 10 ~（13）~ 8 × 10 ~（15）cm ~（-2），研究了注入条件对光致发光（PL）特性的影响。在33%NH_3溶液中，1050 ℃退火30 min后，在621 nm处观察到Eu ~（3+）的4f-4f电子跃迁的强红光发射峰。室温下的PL峰强度与GaN的近带边发射几乎相同。随着Eu剂量的增加，PL强度增加到3 × 10（14）cm（-2），但在1 × 10（15）cm（-2）附近饱和。在1 × 10 ~（15）cm ~（-2）以上的剂量下，荧光强度随Eu浓度的增加而降低。PL强度下降的原因可以解释在浓度猝灭，由于高浓度的Eu，以及由注入产生的残留损伤。(C)2003 Elsevier Science B. V.保留所有权利。
Europium (Eu) ions were implanted into gallium nitride (GaN) epitaxial layers with doses ranging from 1x 10(13) to 8 x 10(15) cm(-2) at room temperature (RT) to investigate the effects of implantation condition on the photoluminescence (PL) properties. The strong red emission peak from 4f-4f electron transition of Eu3+ is observed at 621 nm after annealing at 1050 degreesC for 30 min in 33% NH3 diluted with N-2. The PL peak intensity at RT is almost the same as those from the near-band-edge emission of GaN. The PL intensity increases with increasing Eu dose up to 3 x 10(14) cm(-2), but saturates around 1 x 10(15) cm(-2). At doses above 1 x 10(15) cm(-2), the PL intensity decreases with increasing Eu concentration. The reasons for the decrease in PL intensity can be interpreted in terms of the concentration quenching due to high Eu concentration as well as residual damage created by implantation. (C) 2003 Elsevier Science B.V. All rights reserved.