Mid-infrared transient reflectance study of the Dirac semimetal Cd3As2 under strong optical pumping
Mid-infrared transient reflectance study of the Dirac semimetal Cd3As2 under strong optical pumping
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强光泵浦下狄拉克半金属Cd3As2的中红外瞬态反射率研究
DOI:
10.1103/physrevb.101.174310
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发表时间:
2020
影响因子:
3.7
通讯作者:
Zhang Xinhui
中科院分区:
文献类型:
--
作者:
Zhai Guihao;Ma Chaoyang;Xiang Junsen;Ye Jialiang;Li Ting;Li Ying;Sun Peijie;Chen Genfu;Wu Xiaoguang;Zhang Xinhui
The three-dimensional Dirac semimetalhas attracted intensive attention recently for its exotic properties. Understanding the hot carrier excitation and its subsequent relaxation is a prerequisite for-based optoelectronics functional in the infrared (IR) and terahertz (THz) frequency range. In this work, the photoexcited hot carrier dynamics of a bulk single crystalin the mid-IR has been explored by using the time-resolved pump-probe reflectance () measurement at room temperature under a strong optical pumping. By combining the experimentalresults and theoretical modeling, we analyzed the transient hot carrier redistribution upon a strong photoexcitation and the subsequent interband transitions. We show that theresponse ofhas a complex behavior, due to the interplay of transitions between Dirac bands and transitions involving both the Dirac and non-Dirac bands. Throughout the mid-IR region measured, we find thatis contributed primarily by changes in the refractive index, rather than by changes in the extinction coefficient. Our findings can help understanding the transient hot electron excitation and relaxation inunder an intense optical pumping, and provide a valuable reference for the-based ultrafast optoelectronics application.