Room-temperature ferromagnetism in Mn-doped semiconducting CdGeP2.
Room-temperature ferromagnetism in Mn-doped semiconducting CdGeP2.
复制标题
Mn 掺杂半导体 CdGeP2 的室温铁磁性。
DOI：
10.1103/physrevlett.88.047205
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发表时间：
2001
影响因子：
8.6
通讯作者：
A. Zunger
中科院分区：
文献类型：
--
作者：
P. Mahadevan;A. Zunger
最近发现掺Mn的黄铜矿CdGeP2具有室温铁磁性。然而，与众所周知的CdTe：Mn（d5）情况类似，预期Cd位点的等价取代会产生反铁磁性。然而，黄铜矿半导体表现出低能量的本征缺陷。我们从理论上证明了铁磁性的结果从相互作用的Mn与空穴产生的本征缺陷。
The chalcopyrite CdGeP2 doped with Mn have been recently found to exhibit room-temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d5) case. However, chalcopyrite semiconductors exhibit low-energy intrinsic defects. We show theoretically how ferromagnetism results from the interaction of Mn with hole-producing intrinsic defects.