Towards high quality CVD graphene growth and transfer
Towards high quality CVD graphene growth and transfer
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DOI：
10.1016/j.carbon.2015.03.017
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发表时间：
2015-08-01
期刊：
影响因子：
10.9
通讯作者：
Vignaud, D.
中科院分区：
文献类型：
--
作者：
Deokar, G.;Avila, J.;Vignaud, D.
在不同的石墨烯合成方法中，在低成本铜箔上化学气相沉积石墨烯显示出大规模应用的巨大前景。在这里，我们展示了获得高质量石墨烯及其干净转移到任何基材上的生长实验。通过仔细的预退火步骤和优化生长过程中的 H-2 流，获得了无双层的单层石墨烯。使用改进的湿化学石墨烯转移工艺转移生长的石墨烯。解决了传统湿化学、聚甲基丙烯酸甲酯（PMMA）辅助的石墨烯转移工艺中的一些主要缺陷。发现转移到任意基材上的石墨烯均不含金属污染物、缺陷（由石墨烯下方滞留的水引起的裂纹、孔洞或折叠）和 PMMA 残留物。角分辨光电子能谱研究进一步证明了转移石墨烯的高质量，其中在狄拉克点测量了石墨烯电子能带结构特征的线性依赖性。这是对转移到某些 3D 大块基板上的 CVD 生长石墨烯的首次狄拉克锥观察。 (C) 2015 Elsevier Ltd. 保留所有权利。
Among the different graphene synthesis methods, chemical vapor deposition of graphene on low cost copper foil shows great promise for large scale applications. Here, we present growth experiments to obtain high quality graphene and its clean transfer onto any substrates. Bilayer-free monolayer graphene was obtained by a careful pre-annealing step and by optimizing the H-2 flow during growth. The as-grown graphene was transferred using an improved wet chemical graphene transfer process. Some major flaws in the conventional wet chemical, polymethyl methacrylate (PMMA) assisted, graphene transfer process are addressed. The transferred graphene on arbitrary substrates was found to be free of metallic contaminants, defects (cracks, holes or folds caused by water trapped beneath graphene) and PMMA residues. The high quality of the transferred graphene was further evidenced by angle resolved photoelectron spectroscopy studies, for which the linear dependency of the electronic band structure characteristic of graphene was measured at the Dirac point. This is the first Dirac cone observation on the CVD grown graphene transferred on some 3D bulk substrate. (C) 2015 Elsevier Ltd. All rights reserved.